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Hall mobility and carrier concentration versus temperature for type IIa natural insulating diamond doped with boron by ion implantation
de la Houssaye, Paul R., Penchina, Claude M., Hewett, Charles A., Zeidler, James R., Wilson, Robert G.Volume:
71
Year:
1992
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.350967
File:
PDF, 896 KB
english, 1992