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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Full-field EUV and immersion lithography integration in 0.186μm2 FinFET 6T-SRAM cell
Veloso, A., Demuynck, S., Ercken, M., Goethals, A. M., Demand, M., de Marneffe, J.-F., Altamirano, E., De Keersgieter, A., Delvaux, C., De Backer, J., Brus, S., Hermans, J., Baudemprez, B., Van Roey,Year:
2008
Language:
english
DOI:
10.1109/IEDM.2008.4796834
File:
PDF, 6.06 MB
english, 2008