Evaluation of High Frequency Switching Capability of SiC...

IEEE Transactions on Power Electronics 2008 / 09 Vol. 23; Iss. 5

Evaluation of High Frequency Switching Capability of SiC Schottky Barrier Diode, Based on Junction Capacitance Model

Funaki, Tsuyoshi, Kimoto, Tsunenobu, Hikihara, Takashi
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Volume:
23
Language:
english
Journal:
IEEE Transactions on Power Electronics
DOI:
10.1109/TPEL.2008.2002096
Date:
September, 2008
File:
PDF, 925 KB
english, 2008
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