The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO 2 on p- and n-type silicon
Dueñas, S, Castán, H, García, H, Barbolla, J, Kukli, K, Aarik, J, Aidla, AVolume:
19
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/19/9/013
Date:
September, 2004
File:
PDF, 372 KB
english, 2004