![](/img/cover-not-exists.png)
Evolution of strain in aluminum gallium nitride/gallium nitride high electron mobility transistors under on-state bias
Ghassemi, H., Lang, A., Johnson, C., Wang, R., Song, B., Phillips, P., Qiao, Q., Klie, R. F., Xing, H. G., Taheri, M. L.Volume:
114
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4818450
File:
PDF, 1.47 MB
english, 2013