On the intersecting behaviour of experimental forward bias current–voltage ( I – V ) characteristics of Al/SiO 2 /p-Si (MIS) Schottky diodes at low temperatures
Dökme, Ïlbilge, Altindal, ŞemsettinVolume:
21
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/21/8/012
Date:
August, 2006
File:
PDF, 296 KB
english, 2006