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[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - MOSFET performance and scalability enhancement by insertion of oxygen layers
Xu, N., Damrongplasit, N., Takeuchi, H., Stephenson, R. J., Cody, N. W., Yiptong, A., Huang, X., Hytha, M., Mears, R. J., Liu, Tsu-Jae KingYear:
2012
Language:
english
DOI:
10.1109/IEDM.2012.6478990
File:
PDF, 768 KB
english, 2012