Proton-induced damage in JFET transistors and charge...

IEEE Transactions on Nuclear Science 2004 / 10 Vol. 51; Iss. 5

Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon

Betta, G.F.D., Manghisoni, M., Ratti, L., Re, V., Speziali, V., Traversi, G., Candelori, A.
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Volume:
51
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2004.835063
Date:
October, 2004
File:
PDF, 224 KB
english, 2004
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