Ripple formation on atomically flat cleaved Si surface with...

Ripple formation on atomically flat cleaved Si surface with roughness of 0.038 nm rms by low-energy Ar[sup 1+] ion bombardment

Pahlovy, Shahjada A., Mahmud, S. F., Yanagimoto, K., Miyamoto, I.
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Volume:
29
Year:
2011
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.3554636
File:
PDF, 792 KB
english, 2011
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