Reactive ion etching of PECVD silicon nitride in SF6 plasma

Journal of Nuclear Materials 1993 Vol. 200; Iss. 3

Reactive ion etching of PECVD silicon nitride in SF6 plasma

Flávia R. de Almeida, R.Katsuhiro Yamamoto, Homero S. Maciel
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Volume:
200
Year:
1993
Language:
english
Pages:
4
DOI:
10.1016/0022-3115(93)90311-l
File:
PDF, 311 KB
english, 1993
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