[IEEE 2010 International Symposium on Next-Generation...

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[IEEE 2010 International Symposium on Next-Generation Electronics (ISNE) - Kaohsiung, Taiwan (2010.11.18-2010.11.19)] 2010 International Symposium on Next Generation Electronics - Characterization for novel non-traditional CMOS inverter composed of a junctionless NMOSFET and a gated N+-N−-P transistor

Lu, Kuan-Yu, Lin, Jyi-Tsong, Chen, Hsuan-Hsu, Eng, Yi-Chuen, Tai, Chih-Hsuan, Chen, Cheng-Hsin, Chang, Yu-Che, Fan, Yi-Hsuan
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Year:
2010
Language:
english
DOI:
10.1109/ISNE.2010.5669150
File:
PDF, 996 KB
english, 2010
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