High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm...

IEEE Electron Device Letters 2013 / 11 Vol. 34; Iss. 11

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Wang, Ye, Wang, Maojun, Xie, Bing, Wen, Cheng P., Wang, Jinyan, Hao, Yilong, Wu, Wengang, Chen, Kevin J., Shen, Bo
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2279844
Date:
November, 2013
File:
PDF, 1.48 MB
english, 2013
Conversion to is in progress
Conversion to is failed