GaN-Based LEDs With Double Strain Releasing MQWs and Si...

IEEE Photonics Technology Letters 2012 / 10 Vol. 24; Iss. 20

GaN-Based LEDs With Double Strain Releasing MQWs and Si Delta-Doping Layers

Chang, Chung-Ying, Chang, Shoou-Jinn, Liu, C. H., Li, Shuguang, Lin, T. K.
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Volume:
24
Language:
english
Journal:
IEEE Photonics Technology Letters
DOI:
10.1109/LPT.2012.2216517
Date:
October, 2012
File:
PDF, 457 KB
english, 2012
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