Summary Abstract: Investigation of the etching mechanism for the ion-assisted reaction of GaAs with Cl2
McNevin, S. C.Volume:
3
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.573337
Date:
May, 1985
File:
PDF, 437 KB
english, 1985