Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb...

Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density

Trinh, Hai-Dang, Lin, Yueh-Chin, Nguyen, Minh-Thuy, Nguyen, Hong-Quan, Duong, Quoc-Van, Luc, Quang-Ho, Wang, Shin-Yuan, Nguyen, Manh-Nghia, Yi Chang, Edward
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Volume:
103
Year:
2013
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4823584
File:
PDF, 1.82 MB
english, 2013
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