High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using...

IEEE Transactions on Electron Devices 2013 / 03 Vol. 60; Iss. 3

High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation

Zhang, Rui, Huang, Po-Chin, Lin, Ju-Chin, Taoka, Noriyuki, Takenaka, Mitsuru, Takagi, Shinichi
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2238942
Date:
March, 2013
File:
PDF, 1.70 MB
english, 2013
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