![](/img/cover-not-exists.png)
[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Novel MOSFET structure using p-n junction gate for ultra-low subthreshold-swing
Kim, Garam, Sun, Min-Chul, Kim, Sang Wan, Kim, Hyun Woo, Kim, Jang Hyun, Park, Euy Hwan, Kim, Hyungjin, Park, Byung-GookYear:
2011
Language:
english
DOI:
10.1109/ISDRS.2011.6135281
File:
PDF, 639 KB
english, 2011