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Silicon tunneling field-effect transistors with tunneling in line with the gate field
Fischer, I. A., Bakibillah, A. S. M., Golve, M., Hahnel, D., Isemann, H., Kottantharayil, A., Oehme, M., Schulze, J.Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2012.2228250
Date:
February, 2013
File:
PDF, 606 KB
english, 2013