Comparison of passivation layers for AlGaN/GaN high...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 2011 Vol. 29; Iss. 6

Comparison of passivation layers for AlGaN/GaN high electron mobility transistors

Fitch, R. C., Walker, D. E., Chabak, K. D., Gillespie, J. K., Kossler, M., Trejo, M., Crespo, A., Liu, L., Kang, T. S., Lo, C.-F., Ren, F., Cheney, D. J., Pearton, S. J.
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Volume:
29
Year:
2011
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3656390
File:
PDF, 2.01 MB
english, 2011
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