Dry via hole etching of GaAs using high-density Cl[sub...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 2000 Vol. 18; Iss. 5

Dry via hole etching of GaAs using high-density Cl[sub 2]/Ar plasma

Chen, Y. W., Ooi, B. S., Ng, G. I., Radhakrishnan, K., Tan, C. L.
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Volume:
18
Year:
2000
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.1289548
File:
PDF, 610 KB
english, 2000
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