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[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Electron trapping characteristics and scalability of HfO2 as a trapping layer in SONOS-type flash memories
Hirotaka Hamamura,, Takeshi Ishida,, Toshiyuki Mine,, Yutaka Okuyama,, Digh Hisamoto,, Yasuhiro Shimamoto,, Shin'ichiro Kimura,, Kazuyoshi Torii,Year:
2008
Language:
english
DOI:
10.1109/RELPHY.2008.4558920
File:
PDF, 403 KB
english, 2008