Substitutional-Gate MOSFETs With Composite $( \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}/\hbox{InAs}/\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As})$ Channels and Self-Aligned MBE Source–Drain Regrowth
Lee, Sanghoon, Law, Jeremy J. M., Carter, Andrew D., Thibeault, Brian J., Mitchell, William, Chobpattana, Varistha, Kramer, Stephan, Stemmer, Susanne, Gossard, Arthur C., Rodwell, Mark J. W.Volume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2012.2215572
Date:
November, 2012
File:
PDF, 646 KB
english, 2012