A comparison of carbon and zinc doping in GaAs/AlGaAs...

Semiconductor Science and Technology 1994 / 11 Vol. 9; Iss. 11

A comparison of carbon and zinc doping in GaAs/AlGaAs lasers bandgap-tuned by impurity-free vacancy disordering

Ayling, S G, Bryce, A C, Gontijo, I, Marsh, J H, Roberts, J S
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Volume:
9
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/9/11/020
Date:
November, 1994
File:
PDF, 217 KB
english, 1994
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