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SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Gallium Nitride Materials and Devices VIII - Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy
Turski, Henryk, Siekacz, Marcin, Sawiska, Marta, Wasilewski, Zbig R., Porowski, Sylwester, Skierbiszewski, Czesław, Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, FujiVolume:
8625
Year:
2013
Language:
english
DOI:
10.1117/12.2003850
File:
PDF, 6.04 MB
english, 2013