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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation
Radosavljevic, M., Dewey, G., Basu, D., Boardman, J., Chu-Kung, B., Fastenau, J. M., Kabehie, S., Kavalieros, J., Le, V., Liu, W. K., Lubyshev, D., Metz, M., Millard, K., Mukherjee, N., Pan, L., PillaYear:
2011
Language:
english
DOI:
10.1109/IEDM.2011.6131661
File:
PDF, 602 KB
english, 2011