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Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output...

IEEE Electron Device Letters 2010 / 06 Vol. 31; Iss. 6

Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency

Chabak, Kelson D, Trejo, Manuel, Crespo, Antonio, Walker, Dennis E, Jinwei Yang,, Gaska, Remis, Kossler, Mauricio, Gillespie, James K, Jessen, Gregg H, Trimble, Virginia, Via, Glen D
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2010.2045099
Date:
June, 2010
File:
PDF, 136 KB
english, 2010
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