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High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon
Evans-Freeman, J. H., Kan, P. Y. Y., Abdelgader, N.Volume:
92
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1497721
File:
PDF, 249 KB
english, 2002