Reduction of threading dislocations in N-polar GaN using a...

Journal of Crystal Growth 2014 / 2 Vol. 387

Reduction of threading dislocations in N-polar GaN using a pseudomorphicaly grown graded-Al-fraction AlGaN interlayer

Li, Liang, Yang, Lin'an, Cao, Rongtao, Xu, Sheng Rui, Zhou, Xiaowei, Xue, Junshuai, Lin, Zhiyu, Ha, Wei, Zhang, Jincheng, Hao, Yue
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Volume:
387
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2013.10.036
Date:
February, 2014
File:
PDF, 1.38 MB
english, 2014
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