Elimination of Gate Leakage in GaN FETs by Placing Oxide...

IEEE Electron Device Letters 2013 / 10 Vol. 34; Iss. 10

Elimination of Gate Leakage in GaN FETs by Placing Oxide Spacers on the Mesa Sidewalls

Liu, Peng, Xie, Chuncheng, Zhang, Feng, Chen, Jianguo, Chen, Dongmin
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2278013
Date:
October, 2013
File:
PDF, 1011 KB
english, 2013
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