Modeling the field and thermal dependence of...

IEEE Transactions on Nuclear Science 1996 / Dec. Vol. 43; Iss. 6

Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices

Emelianov, V.V., Sogoyan, A.V., Meshurov, O.V., Ulimov, V.N., Pershenkov, V.S.
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Volume:
43
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.556838
Date:
January, 1996
File:
PDF, 787 KB
english, 1996
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