Electronic structure of ytterbium-implanted GaN at ambient...

Journal of Physics Condensed Matter 2012 / 03 Vol. 24; Iss. 9

Electronic structure of ytterbium-implanted GaN at ambient and high pressure: experimental and crystal field studies

Kaminska, A, Ma, C-G, Brik, M G, Kozanecki, A, Boćkowski, M, Alves, E, Suchocki, A
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Volume:
24
Language:
english
Journal:
Journal of Physics: Condensed Matter
DOI:
10.1088/0953-8984/24/9/095803
Date:
March, 2012
File:
PDF, 596 KB
english, 2012
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