Field-effect mobility temperature modeling of 4H-SiC...

Journal of Applied Physics 2006 Vol. 100; Iss. 11

Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors

Pérez-Tomás, A., Brosselard, P., Godignon, P., Millán, J., Mestres, N., Jennings, M. R., Covington, J. A., Mawby, P. A.
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Volume:
100
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2395597
File:
PDF, 825 KB
english, 2006
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