![](/img/cover-not-exists.png)
Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors
PeÌrez-TomaÌs, A., Brosselard, P., Godignon, P., MillaÌn, J., Mestres, N., Jennings, M. R., Covington, J. A., Mawby, P. A.Volume:
100
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2395597
File:
PDF, 825 KB
english, 2006