Iridium oxides based gate interface of AlGaN/GaN high...

Applied Surface Science 2013 / 10 Vol. 283

Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation

Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., Dzuba, J.
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Volume:
283
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2013.06.069
Date:
October, 2013
File:
PDF, 1.75 MB
english, 2013
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