Effect of Ar annealing temperature on SiO2/4H-SiC interface studied by spectroscopic ellipsometry and atomic force microscopy
Zhong, Zhiqin, Zhang, Guojun, Wang, Shuya, Dai, LipingVolume:
16
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2013.07.037
Date:
December, 2013
File:
PDF, 725 KB
english, 2013