Improvement of Interface State and Channel Mobility Using...

Materials Science Forum 2013 / 1 Vol. 740-742

Improvement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) Face

Hiyoshi, Toru, Masuda, Takeyoshi, Wada, Keiji, Harada, Shin, Namikawa, Yasuo
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Volume:
740-742
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.740-742.506
Date:
January, 2013
File:
PDF, 366 KB
english, 2013
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