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Hydrogenated amorphous silicon deposited at very high growth rates by an expanding ArâH[sub 2]âSiH[sub 4] plasma
Kessels, W. M. M., Severens, R. J., Smets, A. H. M., Korevaar, B. A., Adriaenssens, G. J., Schram, D. C., van de Sanden, M. C. M.Volume:
89
Year:
2001
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1338985
File:
PDF, 310 KB
english, 2001