Deep level transient spectroscopy of DX centres in Al...

Semiconductor Science and Technology 1991 / 08 Vol. 6; Iss. 8

Deep level transient spectroscopy of DX centres in Al 0.38 Ga 0.62 As:Te under uniaxial stress

Li, Ming-Fu, Yu, P Y, Bauser, E, Hansen, W L, Haller, E E
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Volume:
6
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/6/8/021
Date:
August, 1991
File:
PDF, 374 KB
english, 1991
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