etching of Si(111): The geometric structure of the reaction...

Physical Review B 1993 / 6 Vol. 47; Iss. 23

etching of Si(111): The geometric structure of the reaction layer

Lo, C. W., Shuh, D. K., Chakarian, V., Durbin, T. D., Varekamp, P. R., Yarmoff, J. A.
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Volume:
47
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.47.15648
Date:
June, 1993
File:
PDF, 594 KB
english, 1993
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