3-D Statistical Simulation Comparison of Oxide Reliability...

IEEE Transactions on Electron Devices 2013 / 12 Vol. 60; Iss. 12

3-D Statistical Simulation Comparison of Oxide Reliability of Planar MOSFETs and FinFET

Gerrer, Louis, Amoroso, Salvatore Maria, Markov, Stanislav, Adamu-Lema, Fikru, Asenov, Asen
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2285588
Date:
December, 2013
File:
PDF, 2.22 MB
english, 2013
Conversion to is in progress
Conversion to is failed