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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Accurate modeling of trench isolation induced mechanical stress effects on MOSFET electrical performance
Bianchi, R.A., Bouche, G., Roux-dit-Buisson, O.Year:
2002
Language:
english
DOI:
10.1109/IEDM.2002.1175792
File:
PDF, 252 KB
english, 2002