Electron mobility behavior in extremely thin SOI MOSFET's

Electron mobility behavior in extremely thin SOI MOSFET's

Jin-Hyeok Choi,, Young-June Park,, Hong-Shick Min
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Volume:
16
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.468289
Date:
November, 1995
File:
PDF, 274 KB
english, 1995
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