[IEEE 2013 IEEE International Nanoelectronics Conference (INEC) - Singapore, Singapore (2013.01.2-2013.01.4)] 2013 IEEE 5th International Nanoelectronics Conference (INEC) - The side effects and the effects of thickness of source/drain fin on P-Type FinFET devices
Yang, Hsin-Chia, Peng, Wei-Yen, Liao, Wen-Shiang, Wu, Guo-Wei, Tsai, Cheng-Yu, Wang, Mu-Chun, Chi, Sung-Ching, Wang, Shea-JueYear:
2013
Language:
english
DOI:
10.1109/INEC.2013.6466012
File:
PDF, 649 KB
english, 2013