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[IEEE 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, China (2008.12.8-2008.12.10)] 2008 IEEE International Conference on Electron Devices and Solid-State Circuits - Modeling of dynamic threshold voltage in high K gate stack and the application in FinFET reliability
Chenyue Ma,, Bo Li,, Lining Zhang,, Jin He,, Xing Zhang,, Xinnan Lin,Year:
2008
Language:
english
DOI:
10.1109/EDSSC.2008.4760661
File:
PDF, 836 KB
english, 2008