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High Microwave and Noise Performance of 0.17-<tex>$muhbox m$</tex>AlGaN–GaN HEMTs on High-Resistivity Silicon Substrates
Minko, A., Hoel, V., Lepilliet, S., Dambrine, G., DeJaeger, J.C., Cordier, Y., Semond, F., Natali, F., Massies, J., Massies, J.Volume:
25
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2004.825208
Date:
April, 2004
File:
PDF, 152 KB
english, 2004