Reduction of Dislocation Density in HVPE-Grown GaN...

Journal of Electronic Materials 2014 / 03 Vol. 43; Iss. 3

Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates

Zhao, Z. D., Wang, B., Sui, Y. P., Xu, W., Li, X. L., Yu, G. H.
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Volume:
43
Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-013-2920-5
Date:
March, 2014
File:
PDF, 358 KB
english, 2014
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