MOCVD doping technology for phosphorus incorporation in...

Diamond and Related Materials 2007 / 4 Vol. 16; Iss. 4-7

MOCVD doping technology for phosphorus incorporation in diamond: Influence of the growth temperature on the electrical properties

Kociniewski, T., Pinault, M.-A., Barjon, J., Jomard, F., Chevallier, J., Saguy, C.
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Volume:
16
Language:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/j.diamond.2006.12.032
Date:
April, 2007
File:
PDF, 236 KB
english, 2007
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