Chemical mechanical planarization of patterned InP in shallow trench isolation (STI) template structures using hydrogen peroxide–based silica slurries containing oxalic acid or citric acid
Matovu, John B., Ong, Patrick, Teugels, Lieve G., Leunissen, Leonardus H.A., Babu, S.V.Volume:
116
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2013.11.009
Date:
March, 2014
File:
PDF, 1.18 MB
english, 2014