Influence of the GaN capping thickness on the strain and...

Thin Solid Films 2013 / 2 Vol. 529

Influence of the GaN capping thickness on the strain and photoluminescence properties of InN/GaN quantum dots

Ke, Wen-Cheng, Wu, Yue-Han, Houng, Wei-Chung, Wei, Chih-An
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Volume:
529
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2012.05.040
Date:
February, 2013
File:
PDF, 1.08 MB
english, 2013
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