Swift-heavy-ion-induced damage formation in III-V binary...

Physical Review B 2010 / 2 Vol. 81; Iss. 7

Swift-heavy-ion-induced damage formation in III-V binary and ternary semiconductors

Schnohr, C. S., Kluth, P., Giulian, R., Llewellyn, D. J., Byrne, A. P., Cookson, D. J., Ridgway, M. C.
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Volume:
81
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.81.075201
Date:
February, 2010
File:
PDF, 629 KB
english, 2010
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