Development of MOS Transistors for Radiation-Hardened Large...

Journal of Nuclear Science and Technology 1994 / 01 Vol. 31; Iss. 1

Development of MOS Transistors for Radiation-Hardened Large Scale Integrated Circuits and Analysis of Radiation-Induced Degradation

KAMIMURA, Hiroshi, YOSHIOKA, Shinichi, AKIYAMA, Masatsugu, NAKAMURA, Mitsuhiro, TAMURA, Takashi, KUBOYAMA, Satoshi
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Volume:
31
Language:
english
Journal:
Journal of Nuclear Science and Technology
DOI:
10.1080/18811248.1994.9735112
Date:
January, 1994
File:
PDF, 859 KB
english, 1994
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